etched surface meaning in English
腐蚀面
Examples
- This in turn causes a more profound modification of the etched surface , e . g . , due to roughening or amorphization
这将导致对于刻蚀表面的严重修正，譬如粗糙度和非晶化。 - The structure is shown to achieve extremely low reflectance over a wide field of view and a wide light wave band . in the second section , we analyzed the etching surface
在衍射光学元件的制作实验部分，本论文完成的主要工作是进行刻蚀工艺的研究，对离子束刻蚀产生的面形进行了理论的分析。 - It is very importance to analyze the evolution of microscopic surface features , which impact on the etching surface shape in solid etching process . much theoretical and experimental study point out that the different etching surface shapes by the plasma beam with same energy will be different
随着衍射光学元件的应用和半导体工业的发展，对刻蚀工艺中存在的导致刻蚀表面面形发生各种形变的诸多影响因素的数学分析是一个比较复杂和重要的问题。 - We give some useful analyses and the computer simulations for the ion etching process . compared with the atomic force microscope ( afm ) scanning photograph of the etching surface , the theoretical results prove that these simulation analyses assure the precision required by this problem , so these mathematical models are reasonable and correct . the analysis method in this paper is useful to analyze etching process , and it can also afford some valuable reference to etching technology
在本论文我们主要利用这个数学模型，对使用离子束刻蚀制作单台阶光栅的台阶与沟槽部分的表面面形随时间的演变过程分别进行了计算机模拟分析，并通过把理论结果与在实验中得到的刻蚀表面在原子力显微镜（ afm ）下拍摄的照片进行比较，结果说明这种模拟分析能够保证对该问题分析所要求的精度，从而也证明了理论模型的合理性和正确性。 - Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this , high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule . on the basis of this , we deeply explore method of detector fabrication . and we also studied the level and density of traps in detector . gold , indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1 . 5mm to compare different contact technologies . the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors
我们利用熔体温度振荡法在石英安瓿中将6n的单质cd 、 zn 、 te合成多晶原料，用坩锅旋转下降法在同一安瓿中生长出尺寸为20 40mm的cd _ ( 1 - x ) zn _ xte晶体。在此基础上对碲锌镉探测器的工艺进行了较深入的研究，制作了厚1 ? 1 . 5mm的探测器，测试了c 、 in 、 au等不同金属的电极接触性能，并在国内首次通过测试器件的i ? v 、 i ? t曲线、弛豫特性和电容特性对电阻率、陷阱能级、陷阱浓度进行了分析，同时测得的~ ( 241 ) am源的能谱。